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Samsung M471B5273EB0-CK0 4GB
Samsung M378A2K43EB1-CWE 16GB

Samsung M471B5273EB0-CK0 4GB vs Samsung M378A2K43EB1-CWE 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Samsung M378A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M378A2K43EB1-CWE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 40
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Samsung M378A2K43EB1-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 33
  • 读取速度，GB/s
    12.3 left arrow 18.5
  • 写入速度，GB/s
    8.9 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 3341

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Samsung M378A2K43EB1-CWE 16GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-4133C19-8GTZKW 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK64GX4M2A2666C16 32GB
Corsair CMK64GX4M2A2666C16 32GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Golden Empire CL14-16-16 D4-3000 4GB
Golden Empire CL14-16-16 D4-3000 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
SK Hynix HMA84GR7AFR4N-VK 32GB
SK Hynix HMA84GR7AFR4N-VK 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M4A2666C15 8GB
Corsair CMK32GX4M4A2666C15 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Corsair CMD64GX4M8A2800C16 8GB
Corsair CMD64GX4M8A2800C16 8GB
内存RAM