A-DATA Technology DQKD1A08 1GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

SK Hynix HMA851S6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 52

左右 -18% 更低的延时
更快的写入速度，GB/s

11.6 1,145.9

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

SK Hynix HMA851S6DJR6N-XN 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 44
读取速度，GB/s

2,614.5 14.9
写入速度，GB/s

1,145.9 11.6
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

409 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Kingston KHX1600C9S3L/8G 8GB

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Corsair CMK32GX4M2B3000C15 16GB

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Samsung M471B5273CH0-CH9 4GB

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A-DATA Technology AO1P24HC4R1-BUYS 4GB

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Apacer Technology 78.CAGPE.AUF0B 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB