A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3200C16-8GVS 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-3200C16-8GVS 8GB

G Skill Intl F4-3200C16-8GVS 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17.4

测试中的平均数值

G Skill Intl F4-3200C16-8GVS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 66

左右 -136% 更低的延时
更快的写入速度，GB/s

12.6 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3200C16-8GVS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 28
读取速度，GB/s

2,775.5 17.4
写入速度，GB/s

1,557.9 12.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3085

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965600-018.A00G 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston 9905403-061.A00LF 2GB

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G Skill Intl F4-3000C16-8GTZR 8GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Essencore Limited IM44GU48N26-GIIHA0 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB