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A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C19-16GTZSW 16GB

A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-4000C19-16GTZSW 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.9
    测试中的平均数值
G Skill Intl F4-4000C19-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 66
    左右 -200% 更低的延时
  • 更快的写入速度，GB/s
    13.6 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C19-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 22
  • 读取速度，GB/s
    2,775.5 left arrow 16.9
  • 写入速度，GB/s
    1,557.9 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 3192

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

G Skill Intl F4-4000C19-16GTZSW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8
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Crucial Technology CT16G4SFD8266.16FE1 16GB
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Crucial Technology CT51264BD1339.M16F 4GB
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Corsair CMR16GX4M2C3200C16 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
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Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM
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Kingston 99U5702-094.A00G 8GB
内存RAM
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Samsung M3 78T2953EZ3-CF7 1GB
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Corsair CMK32GX4M2E3200C16 16GB
内存RAM
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内存RAM
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Micron Technology 16JSF25664HZ-1G1F1 2GB
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内存RAM
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A-DATA Technology DDR4 2400 16GB
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内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Golden Empire CL15-15-15 D4-2400 4GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
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Kingston 9905624-008.A00G 8GB
内存RAM
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Kingston 9905403-444.A00LF 4GB
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内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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G Skill Intl F4-2400C17-8GIS 8GB
内存RAM