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A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4266C19-8GTZR 8GB

A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-4266C19-8GTZR 8GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 19.4
    测试中的平均数值
G Skill Intl F4-4266C19-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 66
    左右 -144% 更低的延时
  • 更快的写入速度，GB/s
    16.3 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4266C19-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 27
  • 读取速度，GB/s
    2,775.5 left arrow 19.4
  • 写入速度，GB/s
    1,557.9 left arrow 16.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 3827

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

G Skill Intl F4-4266C19-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F4-4266C19-8GTZR 8GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Corsair CMT16GX4M2C3466C16 8GB
Corsair CMT16GX4M2C3466C16 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK16GX4M2Z2666C16 8GB
Corsair CMK16GX4M2Z2666C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Apacer Technology 78.CAGMR.ARC0B 8GB
Apacer Technology 78.CAGMR.ARC0B 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston X5H5PW-MIB 8GB
Kingston X5H5PW-MIB 8GB
内存RAM