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A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
比较
A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
总分
A-DATA Technology DQVE1908 512MB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
更快的读取速度,GB/s
2
13.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
66
左右 -136% 更低的延时
更快的写入速度,GB/s
10.1
1,557.9
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
28
读取速度,GB/s
2,775.5
13.8
写入速度,GB/s
1,557.9
10.1
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
382
2179
A-DATA Technology DQVE1908 512MB RAM的比较
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R538G1601U2S-UO 8GB
Corsair CMU16GX4M2C3000C15 8GB
Kingston 9905403-444.A00LF 4GB
SK Hynix HMA41GR7AFR8N-TF 8GB
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR3 1600+ 2GB
Kingston 99U5428-063.A00LF 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
Samsung M471B5673FH0-CF8 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Corsair CML8GX3M2A1866C9 4GB
Kingston 9905734-022.A00G 16GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-2800C16-8GRR 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Panram International Corporation D4N2666PS-16G 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KY7N41-MID 8GB
Kingston 99U5474-023.A00LF 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
报告一个错误
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Bug description
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