A-DATA Technology DQVE1908 512MB vs Kingston KTD3KX-HYA 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

Kingston KTD3KX-HYA 8GB

需要考虑的原因
Kingston KTD3KX-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 66

左右 -57% 更低的延时
更快的读取速度，GB/s

7.4 2

测试中的平均数值
更快的写入速度，GB/s

6.3 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Kingston KTD3KX-HYA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 42
读取速度，GB/s

2,775.5 7.4
写入速度，GB/s

1,557.9 6.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 1331

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GTZKY 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT4G4DFS8213.M8FB 4GB

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Kingston 99U5474-022.A00LF 2GB

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Crucial Technology CT8G4DFS824A.M8FB 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Essencore Limited KD4AGU880-32A160X 16GB

Essencore Limited KD4AGU880-32A160X 16GB

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Corsair CML8GX3M2A1866C9 4GB

G Skill Intl F4-2666C15-8GVK 8GB

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AMD R538G1601U2S 8GB

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Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

Kingston 99U5471-030.A00LF 8GB

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Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

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