A-DATA Technology DQVE1908 512MB vs Kllisre M378A5143EB2-CRC 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 11.1

测试中的平均数值

Kllisre M378A5143EB2-CRC 4GB

需要考虑的原因
Kllisre M378A5143EB2-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 66

左右 -40% 更低的延时
更快的写入速度，GB/s

7.9 1,557.9

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Kllisre M378A5143EB2-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 47
读取速度，GB/s

2,775.5 11.1
写入速度，GB/s

1,557.9 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

382 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Samsung M471B5674QH0-YK0 2GB

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Corsair CMD32GX4M4A2800C16 8GB

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Samsung M471B5173BH0-CK0 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-3200C16-4GTZ 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905713-035.A00G 8GB

Kingston 9905713-035.A00G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB