Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M471A1K43BB1-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M471A1K43BB1-CRC 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

Samsung M471A1K43BB1-CRC 8GB

需要考虑的原因
Samsung M471A1K43BB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 62

左右 -68% 更低的延时
更快的读取速度，GB/s

14.3 7.4

测试中的平均数值
更快的写入速度，GB/s

9.9 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M471A1K43BB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 37
读取速度，GB/s

7.4 14.3
写入速度，GB/s

5.9 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1612 2422

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMK16GX4M1E3200C16 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT4G4DFS8213.C8FBR2 4GB

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G Skill Intl F4-4000C18-32GTRS 32GB

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