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A-DATA Technology DQVE1908 512MB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB

A-DATA Technology DQVE1908 512MB vs Ramaxel Technology RMSA3320ME88HBF-3200 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.2
    测试中的平均数值
Ramaxel Technology RMSA3320ME88HBF-3200 16GB 需要考虑的原因
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 66
    左右 -61% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 41
  • 读取速度，GB/s
    2,775.5 left arrow 16.2
  • 写入速度，GB/s
    1,557.9 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2847

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMW32GX4M2C3200C16 16GB
Corsair CMW32GX4M2C3200C16 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 99U5734-014.A00G 16GB
Kingston 99U5734-014.A00G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905734-062.A00G 32GB
Kingston 9905734-062.A00G 32GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW64GX4M8Z2933C16 8GB
Corsair CMW64GX4M8Z2933C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMR32GX4M4C3333C16 8GB
Corsair CMR32GX4M4C3333C16 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston LV36D4U1S8HD-8XR 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Corsair CMZ8GX3M2A1600C9G 4GB
Corsair CMZ8GX3M2A1600C9G 4GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston KF3600C17D4/8GX 8GB
Kingston KF3600C17D4/8GX 8GB
内存RAM