Samsung M393B2G70BH0-CK0 16GB vs G Skill Intl F4-2400C15-4GRR 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

G Skill Intl F4-2400C15-4GRR 4GB

G Skill Intl F4-2400C15-4GRR 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

G Skill Intl F4-2400C15-4GRR 4GB

需要考虑的原因
G Skill Intl F4-2400C15-4GRR 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 54

左右 -46% 更低的延时
更快的读取速度，GB/s

14.8 9.2

测试中的平均数值
更快的写入速度，GB/s

11.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2400C15-4GRR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 37
读取速度，GB/s

9.2 14.8
写入速度，GB/s

8.1 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2751

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMK16GX4M2B3200C14 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Apacer Technology GD2.1542WS.003 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston 9905624-010.A00G 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M471A1K43DB1-CWE 8GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-2400C15-4GRR 4GB

G Skill Intl F4-2400C15-4GRR 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A4K40BB0-CPB 32GB

Samsung M393A4K40BB0-CPB 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905734-082.A00G 16GB

Kingston 9905734-082.A00G 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB