Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-4133C19-8GTZC 8GB

总分

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

总分

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

差异规格评论

差异

Nanya Technology M2X4G64CB8HG9N-DG 4GB

需要考虑的原因
Nanya Technology M2X4G64CB8HG9N-DG 4GB

报告一个错误

G Skill Intl F4-4133C19-8GTZC 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZC 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 -57% 更低的延时
更快的读取速度，GB/s

19.3 14.9

测试中的平均数值
更快的写入速度，GB/s

16.7 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-4133C19-8GTZC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 23
读取速度，GB/s

14.9 19.3
写入速度，GB/s

9.5 16.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2292 4015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

SK Hynix HMA81GU7AFR8N-UH 8GB

SK Hynix HMA81GU7AFR8N-UH 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 9905744-023.A00G 16GB

Kingston 9905744-023.A00G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9905665-009.A00G 4GB

Kingston 9905665-009.A00G 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905702-184.A00G 8GB

Kingston 9905702-184.A00G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

G Skill Intl F4-3200C14-8GTZKO 8GB

G Skill Intl F4-3200C14-8GTZKO 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Crucial Technology BLS8G4D240FSC.16FBD2 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4DFS824A.M8FA 8GB

Crucial Technology CT8G4DFS824A.M8FA 8GB