A-DATA Technology DQVE1908 512MB vs SK Hynix HMA81GU6CJR8N-XN 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 16.4

测试中的平均数值

SK Hynix HMA81GU6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GU6CJR8N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 66

左右 -113% 更低的延时
更快的写入速度，GB/s

12.6 1,557.9

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

SK Hynix HMA81GU6CJR8N-XN 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 31
读取速度，GB/s

2,775.5 16.4
写入速度，GB/s

1,557.9 12.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

382 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

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Samsung M393B5170FH0-CH9 4GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

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SK Hynix HMA425S6BJR6N-UH 2GB

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Kingston 9905702-137.A00G 8GB