A-DATA Technology DQVE1B16 2GB vs Micron Technology TEAMGROUP-UD4-2400 16GB

总分

A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

总分

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

差异规格评论

差异

A-DATA Technology DQVE1B16 2GB

需要考虑的原因
A-DATA Technology DQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,285.0 11.3

测试中的平均数值

Micron Technology TEAMGROUP-UD4-2400 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 68

左右 -127% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1B16 2GB

Micron Technology TEAMGROUP-UD4-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 30
读取速度，GB/s

4,165.3 16.8
写入速度，GB/s

2,285.0 11.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

784 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 16HTF25664HY-800J2 2GB

Micron Technology 16HTF25664HY-800J2 2GB

G Skill Intl F4-2800C15-8GVR 8GB

G Skill Intl F4-2800C15-8GVR 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMD64GX4M4B3000C15 16GB

Corsair CMD64GX4M4B3000C15 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

G Skill Intl F4-2666C19-8GVR 8GB

G Skill Intl F4-2666C19-8GVR 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB