A-DATA Technology VDQVE1B16 2GB vs Chun Well Technology Holding Limited D4U0832161B 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 19.1

测试中的平均数值
更快的写入速度，GB/s

2,061.2 12.6

测试中的平均数值

Chun Well Technology Holding Limited D4U0832161B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832161B 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 -35% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Chun Well Technology Holding Limited D4U0832161B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 34
读取速度，GB/s

4,937.3 19.1
写入速度，GB/s

2,061.2 12.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 3178

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IMA41GU6MFR8N-CF0 8GB

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Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Corsair CMK16GX4M4A2400C14 4GB

Corsair CMK16GX4M4A2400C14 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Corsair CML16GX3M2A1600C10 8GB

Super Talent F26UB16GH 16GB

Super Talent F26UB16GH 16GB