A-DATA Technology VDQVE1B16 2GB vs Corsair CMR64GX4M8C3000C15 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 98

左右 53% 更低的延时
更快的读取速度，GB/s

4 10.7

测试中的平均数值

Corsair CMR64GX4M8C3000C15 8GB

需要考虑的原因
Corsair CMR64GX4M8C3000C15 8GB

报告一个错误

更快的写入速度，GB/s

9.0 2,061.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMR64GX4M8C3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 98
读取速度，GB/s

4,937.3 10.7
写入速度，GB/s

2,061.2 9.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 1679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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Samsung M378B5773DH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

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Ramaxel Technology RMSA3260MH78HAF-2666 8GB

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Kingston KVR16N11/8-SP 8GB

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Avant Technology W642GU42J9266N8 16GB

Avant Technology W642GU42J9266N8 16GB

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Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB