A-DATA Technology VDQVE1B16 2GB vs Corsair CMSO16GX4M1A2133C15 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Corsair CMSO16GX4M1A2133C15 16GB

需要考虑的原因
Corsair CMSO16GX4M1A2133C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 46

左右 -31% 更低的延时
更快的写入速度，GB/s

9.6 2,061.2

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMSO16GX4M1A2133C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 35
读取速度，GB/s

4,937.3 13.7
写入速度，GB/s

2,061.2 9.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

759 2636

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C16-8GTRS 8GB

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PNY Electronics PNY 2GB

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Kingston KHX2666C16D4/16GX 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston KHX3200C20S4/32GX 32GB

Kingston KHX3200C20S4/32GX 32GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Corsair CMK32GX4M4C3400C16 8GB

Corsair CMK32GX4M4C3400C16 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB