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A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
比较
A-DATA Technology VDQVE1B16 2GB vs Crucial Technology BLS8G4D240FSA.16FARG 8GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Crucial Technology BLS8G4D240FSA.16FARG 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
15.1
测试中的平均数值
更快的写入速度,GB/s
2,061.2
11.1
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FARG 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
46
左右 -28% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
36
读取速度,GB/s
4,937.3
15.1
写入速度,GB/s
2,061.2
11.1
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
759
2800
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Crucial Technology BLS8G4D240FSA.16FARG 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905713-030.A00G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-8GVR 8GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
G Skill Intl F4-3000C16-16GSXKB 16GB
Kingston 99U5428-018.A00LF 8GB
Corsair CMT16GX4M2K3600C16 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Kingston 99U5403-036.A00G 4GB
Corsair CMR32GX4M2C3333C16 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
SK Hynix HMT41GU7MFR8A-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
Samsung M471B5273EB0-CK0 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Kingston KHX1600C9S3L/4G 4GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C14-8GTZN 8GB
报告一个错误
×
Bug description
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