A-DATA Technology VDQVE1B16 2GB vs Crucial Technology BLS8G4D240FSE.M16FAD 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 13

测试中的平均数值

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的写入速度，GB/s

8.6 2,061.2

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

4,937.3 13.0
写入速度，GB/s

2,061.2 8.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 2243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

PNY Electronics PNY 2GB

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Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

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Panram International Corporation W4U2666P-8G 8GB

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Kingston KF552C40-16 16GB

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Micron Technology 8ATF1G64HZ-3G2J1 8GB