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A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB

A-DATA Technology VDQVE1B16 2GB vs Crucial Technology CT4G4DFS8213.C8FBD2 4GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 10.6
    测试中的平均数值
Crucial Technology CT4G4DFS8213.C8FBD2 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 46
    左右 -48% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 31
  • 读取速度，GB/s
    4,937.3 left arrow 15.3
  • 写入速度，GB/s
    2,061.2 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2659

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CM4X8GE2666C16K4 8GB
Corsair CM4X8GE2666C16K4 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-2800C15-16GVR 16GB
G Skill Intl F4-2800C15-16GVR 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905624-022.A00G 8GB
Kingston 9905624-022.A00G 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMK8GX4M2B4133C19 4GB
Corsair CMK8GX4M2B4133C19 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
内存RAM
Kingston ACR16D3LS1KNG/8G 8GB
Kingston ACR16D3LS1KNG/8G 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Terabyte Co Ltd RCX2-16G3000R 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM