RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTRG 8GB

A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3200C16-8GTRG 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTRG 8GB

G Skill Intl F4-3200C16-8GTRG 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 14.8
    测试中的平均数值
G Skill Intl F4-3200C16-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 46
    左右 -70% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 27
  • 读取速度，GB/s
    4,937.3 left arrow 17.9
  • 写入速度，GB/s
    2,061.2 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3514

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

G Skill Intl F4-3200C16-8GTRG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTRG 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMD32GX4M4C3200C14M 8GB
Corsair CMD32GX4M4C3200C14M 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M471A2K43CBCBCRC 16GB
Samsung M471A2K43CBCBCRC 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
G Skill Intl F4-3200C15-4GRKD 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM