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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3333C16-4GRKD 4GB

A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3333C16-4GRKD 4GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 10.3
    测试中的平均数值
G Skill Intl F4-3333C16-4GRKD 4GB 需要考虑的原因
G Skill Intl F4-3333C16-4GRKD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 46
    左右 -64% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3333C16-4GRKD 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 28
  • 读取速度，GB/s
    4,937.3 left arrow 12.9
  • 写入速度，GB/s
    2,061.2 left arrow 10.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2619

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

G Skill Intl F4-3333C16-4GRKD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3333C16-4GRKD 4GB
G Skill Intl F4-3333C16-4GRKD 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston MSI24D4S7D8MB-16 16GB
Kingston MSI24D4S7D8MB-16 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F4-3200C15-8GVR 8GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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Team Group Inc. DDR4 3600 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
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Kingston MSISID4S9S8ME-8 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Crucial Technology CT8G4DFS8266.C8FD1 8GB
内存RAM