Corsair CMSO4GX3M1C1600C11 4GB vs Crucial Technology CT8G4DFRA266.C8FJ 8GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Crucial Technology CT8G4DFRA266.C8FJ 8GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 26% 更低的延时

Crucial Technology CT8G4DFRA266.C8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FJ 8GB

报告一个错误

更快的读取速度，GB/s

14.6 12.6

测试中的平均数值
更快的写入速度，GB/s

12.2 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Crucial Technology CT8G4DFRA266.C8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 38
读取速度，GB/s

12.6 14.6
写入速度，GB/s

8.3 12.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2112 2915

RAM Latency Calculator

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PNY Electronics PNY 2GB

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Transcend Information TS1GLH64V1H 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

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Samsung M378B5273CH0-CH9 4GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB

Micron Technology 16ATF2G64AZ-2G6D1 16GB