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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C17-8GTRG 8GB

A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3600C17-8GTRG 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 16.0
    测试中的平均数值
G Skill Intl F4-3600C17-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 46
    左右 -130% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 20
  • 读取速度，GB/s
    4,937.3 left arrow 19.7
  • 写入速度，GB/s
    2,061.2 left arrow 16.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3465

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

G Skill Intl F4-3600C17-8GTRG 8GB RAM的比较

AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4000C15-8GTRG 8GB
G Skill Intl F4-4000C15-8GTRG 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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Kingston 9965600-005.A01G 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM