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A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4266C17-16GVKB 16GB

A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-4266C17-16GVKB 16GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 21.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 19.8
    测试中的平均数值
G Skill Intl F4-4266C17-16GVKB 16GB 需要考虑的原因
G Skill Intl F4-4266C17-16GVKB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 46
    左右 -92% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4266C17-16GVKB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 24
  • 读取速度，GB/s
    4,937.3 left arrow 21.1
  • 写入速度，GB/s
    2,061.2 left arrow 19.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    759 left arrow 4394

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

G Skill Intl F4-4266C17-16GVKB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
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Smart Modular SMS4WEC8C2K0446FCG 16GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4266C17-16GVKB 16GB
G Skill Intl F4-4266C17-16GVKB 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Samsung M393B2G70BH0-CH9 16GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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内存RAM
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Kingston 9905702-137.A00G 8GB
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内存RAM
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Kingston 99U5584-004.A00LF 4GB
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内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Corsair CMR16GX4M2F4000C19 8GB
内存RAM