RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology VDQVE1B16 2GB
Kingston 9905624-025.A00G 8GB

A-DATA Technology VDQVE1B16 2GB vs Kingston 9905624-025.A00G 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Kingston 9905624-025.A00G 8GB

Kingston 9905624-025.A00G 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 13.4
    测试中的平均数值
Kingston 9905624-025.A00G 8GB 需要考虑的原因
Kingston 9905624-025.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 46
    左右 -59% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Kingston 9905624-025.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 29
  • 读取速度，GB/s
    4,937.3 left arrow 17.4
  • 写入速度，GB/s
    2,061.2 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2841

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Kingston 9905624-025.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C19-8GSXW 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology BL8G24C16U4B.8FB 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK16GX4M2D3600C16 8GB
Corsair CMK16GX4M2D3600C16 8GB
内存RAM
SK Hynix HMA41GS6AFR8N-TF 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Kingston 9905668-002.A00G 8GB
Kingston 9905668-002.A00G 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
SK Hynix HMA82GU7MFR8N-TF 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM