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A-DATA Technology VDQVE1B16 2GB
Kingston KHX2400C15S4/4G 4GB

A-DATA Technology VDQVE1B16 2GB vs Kingston KHX2400C15S4/4G 4GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Kingston KHX2400C15S4/4G 4GB

Kingston KHX2400C15S4/4G 4GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 14.8
    测试中的平均数值
Kingston KHX2400C15S4/4G 4GB 需要考虑的原因
Kingston KHX2400C15S4/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 46
    左右 -64% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Kingston KHX2400C15S4/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 28
  • 读取速度，GB/s
    4,937.3 left arrow 18.2
  • 写入速度，GB/s
    2,061.2 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3038

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Kingston KHX2400C15S4/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 99U5734-014.A00G 16GB
Kingston 99U5734-014.A00G 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston KTD3KX-MIB 8GB
Kingston KTD3KX-MIB 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston XW21KG-MIE-NX 8GB
Kingston XW21KG-MIE-NX 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C16-8GTZKO 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Transcend Information AQD-SD4U8GE21-SG 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM