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A-DATA Technology VDQVE1B16 2GB
Kingston KYXC0V-MID 16GB

A-DATA Technology VDQVE1B16 2GB vs Kingston KYXC0V-MID 16GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 11.5
    测试中的平均数值
Kingston KYXC0V-MID 16GB 需要考虑的原因
Kingston KYXC0V-MID 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 46
    左右 -28% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Kingston KYXC0V-MID 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 36
  • 读取速度，GB/s
    4,937.3 left arrow 15.2
  • 写入速度，GB/s
    2,061.2 left arrow 11.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2903

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Kingston KYXC0V-MID 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology VDQVE1B16 2GB
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Apacer Technology AQD-D4U8GN24-SE 8GB
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Crucial Technology BL16G30C15U4R.M16FE1 16GB
内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
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内存RAM
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Crucial Technology CT8G4SFS8213.C8FH1 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
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Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
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