A-DATA Technology VDQVE1B16 2GB vs PUSKILL PJ16TFK1GM8 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 12.7

测试中的平均数值
更快的写入速度，GB/s

2,061.2 10.7

测试中的平均数值

PUSKILL PJ16TFK1GM8 16GB

需要考虑的原因
PUSKILL PJ16TFK1GM8 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 -12% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

PUSKILL PJ16TFK1GM8 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 41
读取速度，GB/s

4,937.3 12.7
写入速度，GB/s

2,061.2 10.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 2621

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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DSL Memory D4SS1G082SH21A-B 16GB

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Samsung M393B2G70BH0-YK0 16GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Micron Technology 36ASF4G72LZ-2G3A1 32GB

Kingston 9965525-018.A00LF 4GB

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Transcend Information TS2GLH64V6B 16GB

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Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston KHX4133C19D4/8GX 8GB

Kingston KHX4133C19D4/8GX 8GB

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Crucial Technology CT102464BF160B.16F 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB