A-DATA Technology VDQVE1B16 2GB vs Samsung M378A4G43AB2-CWE 32GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 16.9

测试中的平均数值
更快的写入速度，GB/s

2,061.2 14.4

测试中的平均数值

Samsung M378A4G43AB2-CWE 32GB

需要考虑的原因
Samsung M378A4G43AB2-CWE 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 46

左右 -24% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Samsung M378A4G43AB2-CWE 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 37
读取速度，GB/s

4,937.3 16.9
写入速度，GB/s

2,061.2 14.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

759 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M471A5143SB1-CRC 4GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

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Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Crucial Technology BL16G36C16U4R.M16FE1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Kingston 9905668-002.A00G 8GB

Kingston 9905668-002.A00G 8GB