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A-DATA Technology VDQVE1B16 2GB
Samsung M471A4G43AB1-CWE 32GB
比较
A-DATA Technology VDQVE1B16 2GB vs Samsung M471A4G43AB1-CWE 32GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Samsung M471A4G43AB1-CWE 32GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
15.6
测试中的平均数值
更快的写入速度,GB/s
2,061.2
12.8
测试中的平均数值
需要考虑的原因
Samsung M471A4G43AB1-CWE 32GB
报告一个错误
低于PassMark测试中的延时,ns
45
46
左右 -2% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Samsung M471A4G43AB1-CWE 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
45
读取速度,GB/s
4,937.3
15.6
写入速度,GB/s
2,061.2
12.8
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
759
2925
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Samsung M471A4G43AB1-CWE 32GB RAM的比较
Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMY8GX3M2A2666C10 4GB
JUHOR JHD3000U1908JG 8GB
Corsair CMY16GX3M4A2133C8 4GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3600C16-32GTZN 32GB
Kingston 99U5403-465.A00LF 8GB
Samsung M471A2K43DB1-CTD 16GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Kingston KVR533D2N4 512MB
SK Hynix HMA82GU6DJR8N-WM 16GB
Corsair CMY8GX3M2A2666C10 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3200C14-8GVR 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Essencore Limited KD4AGU880-34A170X 16GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905702-017.A00G 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) 2400 C17 8GB
报告一个错误
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Bug description
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