A-DATA Technology VDQVE1B16 2GB vs SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 18.4

测试中的平均数值
更快的写入速度，GB/s

2,061.2 13.0

测试中的平均数值

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

4,937.3 18.4
写入速度，GB/s

2,061.2 13.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

759 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3000C16-8GTRS 8GB

G Skill Intl F4-3000C16-8GTRS 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Kingston 9905743-034.A00G 8GB

Kingston 9905743-034.A00G 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

Crucial Technology CT4G4DFS824A.C8FHP 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB