A-DATA Technology VDQVE1B16 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 71

左右 35% 更低的延时
更快的读取速度，GB/s

4 15.6

测试中的平均数值

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

报告一个错误

更快的写入速度，GB/s

6.4 2,061.2

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 71
读取速度，GB/s

4,937.3 15.6
写入速度，GB/s

2,061.2 6.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

759 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX4M2B3600C18 4GB

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Apacer Technology 78.CAGN7.4000C 8GB

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Smart Modular SF464128CKHIWDFSEG 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-3600C19-8GSXKB 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4000C18-16GTRS 16GB

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Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB