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A-DATA Technology VDQVE1B16 2GB
Shenzhen Technology Co Ltd 8GB
比较
A-DATA Technology VDQVE1B16 2GB vs Shenzhen Technology Co Ltd 8GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Shenzhen Technology Co Ltd 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
15.9
测试中的平均数值
更快的写入速度,GB/s
2,061.2
11.9
测试中的平均数值
需要考虑的原因
Shenzhen Technology Co Ltd 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
46
左右 -44% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Shenzhen Technology Co Ltd 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
32
读取速度,GB/s
4,937.3
15.9
写入速度,GB/s
2,061.2
11.9
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
759
2831
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Shenzhen Technology Co Ltd 8GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M393A1G43DB1-CRC 8GB
Kingston ACR16D3LS1KNG/4G 4GB
G Skill Intl F4-2133C15-8GNT 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-4000C17-8GTZR 8GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMT16GX4M2C3200C16 8GB
Samsung M378B5673FH0-CH9 2GB
Kingston KHX2666C16S4/16G 16GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMSX64GX4M2A3200C22 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Samsung M378B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Asgard VMA41UG-MEC1U2AW1 8GB
Kingston KVR16N11/8-SP 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD824A.C16FBR 16GB
报告一个错误
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