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Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CM4X8GF2666C18S2 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB vs Corsair CM4X8GF2666C18S2 8GB

总分
star star star star star
Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分
star star star star star
Corsair CM4X8GF2666C18S2 8GB

Corsair CM4X8GF2666C18S2 8GB

差异 规格 评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB
报告一个错误
Corsair CM4X8GF2666C18S2 8GB 需要考虑的原因
Corsair CM4X8GF2666C18S2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 41
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CM4X8GF2666C18S2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 31
  • 读取速度，GB/s
    13.3 left arrow 16.2
  • 写入速度，GB/s
    8.8 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2394 left arrow 3091

Crucial Technology BLS8G3N169ES4.16FE 8GB RAM的比较

Samsung M471B5673FH0-CH9 2GB
Apacer Technology D12.2324CS.001 8GB

Corsair CM4X8GF2666C18S2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
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Corsair CMZ16GX3M2A1866C9 8GB
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内存RAM
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内存RAM
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Kingston KVR533D2N4 512MB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Nanya Technology NT1GT64U88D0BY-AD 1GB
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