RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA81GS6CJRJR-VK 8GB

A-DATA Technology VDQVE1B16 2GB vs SK Hynix HMA81GS6CJRJR-VK 8GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,061.2 left arrow 12.8
    测试中的平均数值
SK Hynix HMA81GS6CJRJR-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6CJRJR-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 46
    左右 -77% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA81GS6CJRJR-VK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 26
  • 读取速度，GB/s
    4,937.3 left arrow 19.2
  • 写入速度，GB/s
    2,061.2 left arrow 12.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    759 left arrow 3180

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

SK Hynix HMA81GS6CJRJR-VK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
内存RAM
Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston RB26D4U9D8MEH-16 16GB
Kingston RB26D4U9D8MEH-16 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CM4X16GC3200C16K4 16GB
Corsair CM4X16GC3200C16K4 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905734-003.A00G 32GB
Kingston 9905734-003.A00G 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
King Tiger Technology TMKU8G868-240U 8GB
King Tiger Technology TMKU8G868-240U 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Avexir Technologies Corporation T 4GB
Avexir Technologies Corporation T 4GB
内存RAM