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AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

AMD AE34G1601U1 4GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 67
    左右 -123% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 30
  • 读取速度，GB/s
    6.8 left arrow 16.9
  • 写入速度，GB/s
    3.6 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3257

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
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Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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Kingston 99U5701-003.A00G 16GB
内存RAM
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内存RAM
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内存RAM
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Kingston HX424C15FB/8 8GB
内存RAM