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AMD AE34G1601U1 4GB
Crucial Technology BL8G30C15U4B.8FE 8GB

AMD AE34G1601U1 4GB vs Crucial Technology BL8G30C15U4B.8FE 8GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Crucial Technology BL8G30C15U4B.8FE 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Crucial Technology BL8G30C15U4B.8FE 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4B.8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 67
    左右 -116% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Crucial Technology BL8G30C15U4B.8FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 31
  • 读取速度，GB/s
    6.8 left arrow 18.9
  • 写入速度，GB/s
    3.6 left arrow 14.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3356

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Super Talent F26UB16GH 16GB
Super Talent F26UB16GH 16GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3400C16-16GVR 16GB
G Skill Intl F4-3400C16-16GVR 16GB
内存RAM
A-DATA Technology DQVE1B16 2GB
A-DATA Technology DQVE1B16 2GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Apacer Technology 78.CAGP7.4020B 8GB
Apacer Technology 78.CAGP7.4020B 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMD64GX4M4B2800C14 16GB
Corsair CMD64GX4M4B2800C14 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Apacer Technology GD2.1831WS.002 16GB
Apacer Technology GD2.1831WS.002 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston 9905701-141.A00G 16GB
Kingston 9905701-141.A00G 16GB
内存RAM