AMD AE34G1601U1 4GB vs Crucial Technology CT8G4DFD8213.C16FAR2 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FAR2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 67

左右 -103% 更低的延时
更快的读取速度，GB/s

16.3 6.8

测试中的平均数值
更快的写入速度，GB/s

11.7 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 33
读取速度，GB/s

6.8 16.3
写入速度，GB/s

3.6 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 2930

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112S64CP6-S6 1GB

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Micron Technology 18ASF2G72PDZ-2G3A1 16GB

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INTENSO M418039 8GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-3000C16-16GRS 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-4266C16-8GTZR 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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EXCELERAM D4168G8HHSS9CJRB21 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Corsair CMD16GX4M2A2666C15 8GB

Corsair CMD16GX4M2A2666C15 8GB