AMD AE34G1601U1 4GB vs Crucial Technology CT8G4SFD824A.C16FADP 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Crucial Technology CT8G4SFD824A.C16FADP 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FADP 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 67

左右 -116% 更低的延时
更快的读取速度，GB/s

15.6 6.8

测试中的平均数值
更快的写入速度，GB/s

11.8 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 31
读取速度，GB/s

6.8 15.6
写入速度，GB/s

3.6 11.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

998 2535

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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AMD AE34G1601U1 4GB

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Samsung M4 70T2953EZ3-CE6 1GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMK128GX4M8B3000C16 16GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB