AMD AE34G1601U1 4GB vs G Skill Intl F4-3200C15-4GRKD 4GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

G Skill Intl F4-3200C15-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3200C15-4GRKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 67

左右 -168% 更低的延时
更快的读取速度，GB/s

16.2 6.8

测试中的平均数值
更快的写入速度，GB/s

12.6 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 25
读取速度，GB/s

6.8 16.2
写入速度，GB/s

3.6 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 3187

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5625-015.A00G 16GB

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takeMS International AG TMS2GB264D083805EV 2GB

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EVGA 16G-D4-2400-MR 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M391B5673FH0-CH9 2GB

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Kingston KHX2933C17S4/32G 32GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 9905584-016.A00LF 4GB

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Kingston 99P5471-002.A00LF 2GB

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Shenzhen Technology Co Ltd 8GB

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Kingston K531R8-MIN 4GB

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Crucial Technology CT8G4DFRA266.C8FP 8GB

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Crucial Technology CT8G4SFRA266.C8FE 8GB

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Kingston 9965589-026.D00G 8GB

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Mushkin MR[A/B]4U300JJJM8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB