AMD AE34G1601U1 4GB vs G Skill Intl F4-3200C16-16GSXKB 16GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

G Skill Intl F4-3200C16-16GSXKB 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GSXKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 67

左右 -116% 更低的延时
更快的读取速度，GB/s

18.2 6.8

测试中的平均数值
更快的写入速度，GB/s

15.8 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-16GSXKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 31
读取速度，GB/s

6.8 18.2
写入速度，GB/s

3.6 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905624-019.A00G 8GB

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SK Hynix DDR2 800 2G 2GB

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G Skill Intl F4-3000C14-16GVK 16GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

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Kingston 9965662-013.A01G 16GB

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Samsung M471A2K43CBCBCRC 16GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK16GX4M2G4000C16 8GB

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AMD R534G1601U1S-UO 4GB

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Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

SK Hynix HMA82GR7AFR8N-UH 16GB

SK Hynix HMA82GR7AFR8N-UH 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

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SK Hynix HMA82GU6DJR8N-VK 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N