Crucial Technology CT51264BD1339.M16F 4GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

Micron Technology 16ATF2G64HZ-2G3E2 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E2 16GB

报告一个错误

更快的读取速度，GB/s

16.5 12.1

测试中的平均数值
更快的写入速度，GB/s

13.6 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

12.1 16.5
写入速度，GB/s

8.6 13.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2892

RAM Latency Calculator

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RAM 2

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Micron Technology 8ATF51264HZ-2G1B1 4GB

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Ramaxel Technology RMN1740HC48D8F667A 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

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