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AMD AE34G1601U1 4GB
Gloway International (HK) STK4U2400D17042C 4GB

AMD AE34G1601U1 4GB vs Gloway International (HK) STK4U2400D17042C 4GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Gloway International (HK) STK4U2400D17042C 4GB

Gloway International (HK) STK4U2400D17042C 4GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Gloway International (HK) STK4U2400D17042C 4GB 需要考虑的原因
Gloway International (HK) STK4U2400D17042C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 67
    左右 -191% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Gloway International (HK) STK4U2400D17042C 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 23
  • 读取速度，GB/s
    6.8 left arrow 18.0
  • 写入速度，GB/s
    3.6 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    998 left arrow 2675

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Gloway International (HK) STK4U2400D17042C 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
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Mushkin 99[2/7/4]191[F/T] 4GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
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Samsung M393A4K40BB2-CTD 32GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
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内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
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Apacer Technology 78.CAGP7.DFW0C 8GB
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内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
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内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Corsair CM4X4GF2666C16K4 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CM4B16G1L3200K18K2 16GB
Corsair CM4B16G1L3200K18K2 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Micron Technology 4ATF51264HZ-2G6E3 4GB
内存RAM
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Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
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Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM