AMD AE34G2139U2 4GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

总分

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

总分

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

差异规格评论

差异

AMD AE34G2139U2 4GB

需要考虑的原因
AMD AE34G2139U2 4GB

报告一个错误

低于PassMark测试中的延时，ns

56 86

左右 35% 更低的延时

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

报告一个错误

更快的读取速度，GB/s

12.1 7.4

测试中的平均数值
更快的写入速度，GB/s

5.7 5.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G2139U2 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

56 86
读取速度，GB/s

7.4 12.1
写入速度，GB/s

5.6 5.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1462 1220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G2139U2 4GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

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Corsair CMD8GX3M2A2800C12 4GB

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Mushkin 992038 8GB

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SK Hynix HMA81GU6CJR8N-VK 8GB

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Samsung M378A1K43EB2-CWE 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB