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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs G Skill Intl F4-3600C17-16GTZSW 16GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 18.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-3600C17-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 -67% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 27
  • 读取速度，GB/s
    6,336.8 left arrow 18.3
  • 写入速度，GB/s
    2,935.8 left arrow 17.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 3956

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

G Skill Intl F4-3600C17-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ASU16D3LS1KFG/4G 4GB
Kingston ASU16D3LS1KFG/4G 4GB
Panram International Corporation W4U3200PS-16G 16GB
Panram International Corporation W4U3200PS-16G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited IM48GS88N26-JJJHA0 8GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3733C17-8GTZKK 8GB
G Skill Intl F4-3733C17-8GTZKK 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK16GX4M1A2400C14 16GB
Corsair CMK16GX4M1A2400C14 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A5644EB0-CPB 2GB
Samsung M471A5644EB0-CPB 2GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM
A-DATA Technology ADOVF1B163BEG 2GB
A-DATA Technology ADOVF1B163BEG 2GB
Kingston 9905678-102.A00G 8GB
Kingston 9905678-102.A00G 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
内存RAM