AMD R5316G1609U2K 8GB vs Crucial Technology BLE4G4D26AFEA.8FAD 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FAD 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 73

左右 -109% 更低的延时
更快的读取速度，GB/s

17 6.3

测试中的平均数值
更快的写入速度，GB/s

12.4 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 35
读取速度，GB/s

6.3 17.0
写入速度，GB/s

5.2 12.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2982

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663RZ3-CF7 2GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Kingston ACR24D4S7D8MB-16 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-4000C18-8GTZKK 8GB