AMD R5316G1609U2K 8GB vs Crucial Technology BLS8G4D240FSB.M16FBD 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSB.M16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 73

左右 -161% 更低的延时
更快的读取速度，GB/s

16.8 6.3

测试中的平均数值
更快的写入速度，GB/s

12.7 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology BLS8G4D240FSB.M16FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 28
读取速度，GB/s

6.3 16.8
写入速度，GB/s

5.2 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2834

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston KVR533D2N4 512MB

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Wilk Elektronik S.A. GR3200S464L22/16G 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 9905663-016.A00G 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-4000C17-16GTRSB 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston HX426C16FB2/8-SP 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Transcend Information JM2400HLB-8G 8GB

Transcend Information JM2400HLB-8G 8GB

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SpecTek Incorporated ?????????????????? 2GB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB