AMD R5316G1609U2K 8GB vs G Skill Intl F4-3300C16-4GRKD 4GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

G Skill Intl F4-3300C16-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3300C16-4GRKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 73

左右 -192% 更低的延时
更快的读取速度，GB/s

14.3 6.3

测试中的平均数值
更快的写入速度，GB/s

11.7 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

G Skill Intl F4-3300C16-4GRKD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 25
读取速度，GB/s

6.3 14.3
写入速度，GB/s

5.2 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston HX432C15PB3/16 16GB

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PUSKILL DDR3 1600 8G 8GB

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A-DATA Technology DQKD1A08 1GB

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Corsair CMW16GX4M2C3200C16 8GB

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Corsair CMW32GX4M4K4266C19 8GB

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SK Hynix HMA851S6JJR6N-VK 4GB

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Kingston 9905665-014.A00G 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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A-DATA Technology AO1E34RCSV1-BD7S 16GB

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Team Group Inc. TEAMGROUP-UD4-4000 4GB

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Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

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Kingston 99U5471-020.A00LF 4GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB