Samsung M393B5170FH0-CK0 4GB vs Kingston XF875V-MIH 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Kingston XF875V-MIH 8GB

Kingston XF875V-MIH 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Kingston XF875V-MIH 8GB

需要考虑的原因
Kingston XF875V-MIH 8GB

报告一个错误

更快的读取速度，GB/s

14.8 11.8

测试中的平均数值
更快的写入速度，GB/s

12.7 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Kingston XF875V-MIH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

11.8 14.8
写入速度，GB/s

7.3 12.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 2785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Kingston 9905625-065.A00G 16GB

Kingston 9905625-065.A00G 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

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Kingston 9905403-444.A00LF 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB